Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective

Despite the remarkable development in ferroelectric HfO2-based FETs, key reliability challenges (e.g., retention, endurance, etc.) may still limit their widespread adoption memory and logic applications. In this paper, we present a simple theoretical framework—based on Landau theory of phase transition—to design both FETs (FeFETs) negative capacitance transistors (NCFETs) investigate issues. For FeFETs, analyze role interface bulk traps window closure to quantify endurance under different operating conditions. NCFETs, discuss beneficial NC effect reducing (or even eliminating) persistent issue bias temperature instability that has plagued MOSFETs for decades. FE/NCFETs can also be affected by Hot Atom Damage involving switching-induced bond dissociation during transient overshoot. We conclude discussing how other FET issues TDDB, HCD, have reinterpreted FE/NCFETs.